to ? 92m 1. collector 2. base 3. emitter to ? 92mod 1. emitter 2. collector 3. base to-92mod plastic-encapsulate transistors KSC2330 transistor (npn) features z general purpose amplifier transistor maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =5ma,i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 7 v collector cut-off current i cbo v cb =200v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a dc current gain h fe v ce =10v, i c =20ma 40 240 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.5 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 4 pf transition frequency f t v ce =30v,i c =10ma 50 mhz classification of h fe rank r o y range 40-80 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current 100 ma p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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